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IMZC120R012M2HXKSA1

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IMZC120R012M2HXKSA1

Name: IMZC120R012M2HXKSA1
Brand: Infineon Technologies
Price: 1 USD

Brand Name : Infineon Technologies

Model Number : IMZC120R012M2HXKSA1

Manufacturer : Infineon Technologies

Description : IMZC120R012M2HXKSA1

Supplier Device Package : PG-TO247-4-17

Series : CoolSiC™

FET Type : N-Channel

Technology : SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss) : 1200 V

Current - Continuous Drain (Id) @ 25°C : 129A (Tc)

Drive Voltage (Max Rds On, Min Rds On) : 15V, 18V

Rds On (Max) @ Id, Vgs : 12mOhm @ 57A, 18V

Vgs(th) (Max) @ Id : 5.1V @ 17.8mA

Gate Charge (Qg) (Max) @ Vgs : 124 nC @ 18 V

Vgs (Max) : +23V, -7V

Input Capacitance (Ciss) (Max) @ Vds : 4050 pF @ 800 V

Power Dissipation (Max) : 480W (Tc)

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IMZC120R012M2HXKSA1-Datasheet

Typical Applications

- Very low switching losses.

- Overload operation up to T<sub>vj</sub> = 200°C.

- Short-circuit withstand time of 2 µs.

- Robust body diode for hard commutation.

- XT interconnection technology for enhanced thermal performance.

The IMZC120R012M2H is a 1200 V, 12 mΩ N-channel silicon carbide (SiC) MOSFET from Infineon Technologies, designed for high-efficiency and high-power-density applications.

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