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Brand Name : Infineon Technologies
Model Number : IMZC120R017M2H
Manufacturer : Infineon Technologies
Description : Wider max. VGS range from -10 V to +25 V
Supplier Device Package : PG-TO247-4
Benefits : Higher power density
Ciss : 2910 pF
Coss : 126 pF
ID (@ TC=25°C) max : 97 A
Ptot (@ TA=25°C) max : 382 W
Pin Count : 4 Pins
Polarity : N
QG : 89 nC
Qgd : 24 nC
Qualification : Industrial
RDS (on) (@ Tj = 25°C) : 17 mΩ
RthJA max : 62 K/W
RthJC max : 0.39 K/W
Technology : CoolSiC™ G2
VDS max : 1200 V
Moisture Level : NA
The CoolSiC™ MOSFET discrete 1200 V, 17 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.
- General-purpose drives (GPD). - Electric Vehicle (EV) charging.
- Online Uninterruptible Power Supplies (UPS). - Solar power optimizers
- String inverters. - Energy Storage Systems (ESS).
- Welding equipment.
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