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IMZC120R017M2H

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IMZC120R017M2H

Brand Name : Infineon Technologies

Model Number : IMZC120R017M2H

Manufacturer : Infineon Technologies

Description : Wider max. VGS range from -10 V to +25 V

Supplier Device Package : PG-TO247-4

Benefits : Higher power density

Ciss : 2910 pF

Coss : 126 pF

ID (@ TC=25°C) max : 97 A

Ptot (@ TA=25°C) max : 382 W

Pin Count : 4 Pins

Polarity : N

QG : 89 nC

Qgd : 24 nC

Qualification : Industrial

RDS (on) (@ Tj = 25°C) : 17 mΩ

RthJA max : 62 K/W

RthJC max : 0.39 K/W

Technology : CoolSiC™ G2

VDS max : 1200 V

Moisture Level : NA

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IMZC120R017M2H-DataSheet

The CoolSiC™ MOSFET discrete 1200 V, 17 mΩ G2 in a TO-247 4pin with high creepage package builds on the strengths of Generation 1 technology with significant improvement that provides an advanced solution for more cost-optimized, efficient, compact, easy-to-design and reliable system. It enhanced better performance in both hard-switching operation and soft-switching topologies for all common combinations of AC-DC, DC-DC, and DC-AC stages.

Typical Applications

- General-purpose drives (GPD). - Electric Vehicle (EV) charging.
- Online Uninterruptible Power Supplies (UPS). - Solar power optimizers
- String inverters. - Energy Storage Systems (ESS).
- Welding equipment.


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