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IMZC120R012M2H

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IMZC120R012M2H

Name: IMZC120R012M2H
Brand: Infineon Technologies
Price: 1 USD

Brand Name : Infineon Technologies

Model Number : IMZC120R012M2H

Manufacturer : Infineon Technologies

Description : Wider max. VGS range from -10 V to +25 V

Supplier Device Package : PG-TO247-4

Benefits : Higher power density

Ciss : 4050 pF

Coss : 176 pF

ID (@ T_C=25°C) max : 129 A

Ptot (@ T_A=25°C) max : 480 W

Pin Count : 4 Pins

Polarity : N

QG : 124 nC

Qgd : 34 nC

Qualification : Industrial

RDS (on) (@ Tj = 25°C) : 12 mΩ

RthJA max : 62 K/W

RthJC max : 0.31 K/W

Technology : CoolSiC™ G2

VDS max : 1200 V

Moisture Level : NA

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IMZC120R012M2H-DataSheet

Typical Applications

- General-purpose drives (GPD).

- Electric Vehicle (EV) charging.

- Online Uninterruptible Power Supplies (UPS).

- Solar power optimizers.

- String inverters.

- Energy Storage Systems (ESS).

- Welding equipment.

The IMZC120R012M2H is a 1200 V, 12 mΩ N-channel silicon carbide (SiC) MOSFET from Infineon Technologies, designed for high-efficiency and high-power-density applications.

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