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Mfr.Part # : MT3S113(TE85L,F)
Manufacturer : Toshiba Electronic Devices and Storage Corporation
Description : RF TRANS NPN 5.3V 12.5GHZ SMINI
Stock : 35000
Product Category : Transistors - Bipolar (BJT) - RF
Current - Collector (Ic) (Max) : 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 30mA, 5V
Frequency - Transition : 12.5GHz
Gain : 11.8dB
Mounting Type : Surface Mount
Noise Figure (dB Typ @ f) : 1.45dB @ 1GHz
Operating Temperature : 150°C (TJ)
Package / Case : TO-236-3, SC-59, SOT-23-3
Power - Max : 800mW
Product Status : Active
Supplier Device Package : S-Mini
Transistor Type : NPN
Voltage - Collector Emitter Breakdown (Max) : 5.3V
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MT3S113(TE85L,F) Images |